MB85R1001 8) equivalent, 1 m bit (128 k x 8).
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* Bit configuration : 131,072 words x 8bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temper.
The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1.
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